原子层沉积

Abstract(#br)Novel titania and hafnia structures on top of silica wafer were produced using atomic layer deposition through the accessible pores created by a patterned polydimethylsiloxane (PDMS) stamp in conformal contact. Typically, the processing temperature was in the range of 125\u003cce:hsp sp=\"0.25\"/\u003e°C in order to avoid damaging the stamp and also to create an amorphous metal oxide deposit. Interestingly, the deposit formation tended to be dominated by condensation of the metal oxide precursor and water in the vicinity of the contact edges of the stamp and substrate.

Abstract(#br)Atomic layer deposition (ALD) surges as an attractive technology to deposit thin films on different substrates for many advanced biomedical applications. Herein titanium dioxide (TiO 2 ) thin films were successful obtained on polyurethane (PU) and polydimethylsiloxane (PDMS) substrates using ALD. The effect of TiO 2 films on Candida albicans growth and inactivation process were also systematic discussed. TiCl 4 and H 2 O were used as precursors at 80\u003cce:hsp sp=\"0.25\"/\u003e°C, while the reaction cycle number ranged from 500 to 2000.

摘要\n聚合物在生物材料方面的应用越来越引起人们的兴趣。研究人员一直在尝试将金属氧化物或金属纳入聚合物中，以获得显著提高所得到聚合物材料的理想性能，如导电性和抗菌活性。这类材料的一个很有前途的技术是原子层沉积( ALD )。通过沉积一层非常薄的金属或金属氧化物薄膜，人们可以在不损失聚合物独特的本体性能的前提下利用这些材料的特性，然而，由于表面和亚表面薄膜的生长，这种材料在聚合物上的沉积在一定程度上变得困难。\n本研究在O2等离子体处理和非等离子体处理的PDMS上，研究了TiO2在聚二甲基硅氧烷( PDMS )上成核和生长初期的原子层沉积( ALD )，采用X射线近边结构吸收、扫描电子显微镜/能量色散X射线能谱和X射线光电子能谱对材料进行表征。结果表明，等离子体处理的PDMS表面发生了类ALD的TiO2表面生长，对于非等离子体处理的原始PDMS，TiO2在聚合物亚表面得到了明显的有利扩散/浸润，至少前25个ALD循环没有明显的外表面沉积。