刚度

摘要\n通过一个考虑增强相弯曲变形的理论模型分析了互穿相复合材料( IPCs )的弹性模量。通过文献数据以及嵌入聚二甲基硅氧烷( PDMS )基体的3D打印聚合物增强体构建IPCs的模拟和实验结果对模型进行了验证。增强体呈Octet Truss和Kelvin Cell格子形式，已知其在弹性变形时表现出非常不同程度的弯曲。当基体模量较低时，模型能够解释钢筋支柱的弯曲是如何导致整体IPC模量远低于其他理论模型预测的。当基体模量增加到增强材料的20 %以上时，不同的晶格设计对IPC模量没有显著影响。基体模量的进一步增加将压杆的弹性响应推向等应变极限，因为基体有助于更均匀地分配载荷，抑制压杆的弯曲，特别是对于低密度点阵。该模型能够考虑广泛的不同组成模量，也适用于采用随机泡沫加固的IPCs。本研究得出的见解有望对设计增强体和基体弹性模量相差几个数量级的聚合物基IPCs特别有用。

Elastic Modulus of Locally Stiffness-variant Polydimethylsiloxane Substrates for Stretchable Electronic Packaging ApplicationsStretchable packaging;stretchable substrate;PDMS;stiffness;elastic modulus;In order to apply to stretchable electronics packaging, locally stiffness-variant stretchable substrates consisting of island structure were fabricated by combining two polydimethylsiloxane elastomers of different stiffnesses and their elastic moduli were characterized as a function of the width of the high-stiffness island.

Deformation Behavior of Locally Stiffness-variant Stretchable Substrates Consisting of the Island StructureStretchable packaging;stretchable substrate;PDMS;stiffness;elastic modulus;In order to develop stretchable substrate technology for stretchable devices, locally stiffness-variant stretchable substrates were processed with two polydimethylsiloxane elastomers of different stiffnesses and their deformation behavior was characterized.

Variation of Elastic Stiffness of Polydimethylsiloxane (PDMS) Stretchable Substrates for Wearable Packaging ApplicationsWearable devices;Wearable packaging;Stretchable substrate;PDMS;Stiffness;Elastic modulus;In order to develop stretchable substrates for wearable packaging applications, the variation behavior of elastic modulus was evaluated for transparent PDMS Sylgard 184 and black PDMS Sylgard 170 as a function of the base/curing agent mixing ratio.

摘要\n具有高电子迁移率的二维氧化铋( Bi2O2Se )在未来高性能、柔性的电子和光电子器件中具有优势。然而，薄的Bi2O2Se片的转移是相当困难的，限制了其力学性能的测量和在柔性器件中的应用探索。在此，我们发展了一种可靠有效的聚二甲基硅氧烷( PDMS )介导的方法，可以将Bi2O2Se薄片从生长的基底转移到目标基底上，如微机电系统基底。转移薄片的高保真度源于PDMS薄膜的高粘结能和柔韧性。首次采用纳米压痕法研究了二维Bi2O2Se的力学性能。研究发现，在二维半导体中，少层Bi2O2Se具有较大的本征刚度，为18 ~ 23 GPa，杨氏模量为88.7 ± 14.4 GPa，与理论值相符。此外，少层Bi2O2Se能够承受超过3 %的高径向应变，表现出优异的柔韧性。2D Bi2O2Se力学性能可靠传递方法和文献的发展，共同填补了这一新兴材料力学性能理论预测和实验验证的空白，将推动基于2D Bi2O2Se的柔性电子和光电子领域。