fs- and ns-laser processing of polydimethylsiloxane (PDMS) elastomer: Comparative study

由 ty10086 提交于 周四, 08/26/2021 - 13:29
文章英文标题
fs- and ns-laser processing of polydimethylsiloxane (PDMS) elastomer: Comparative study
正文
Abstract(#br)Medical grade polydimethylsiloxane (PDMS) elastomer is a widely used biomaterial as encapsulation and/or as substrate insulator carrier for long term neural implants because of its remarkable properties. Femtosecond ( λ \u003cce:hsp sp=\"0.25\"/\u003e=\u003cce:hsp sp=\"0.25\"/\u003e263 and 527\u003cce:hsp sp=\"0.25\"/\u003enm) and nanosecond (266 and 532\u003cce:hsp sp=\"0.25\"/\u003enm) laser processing of PDMS-elastomer surface, in air, is investigated. The influence of different processing parameters, including laser wavelength, pulse duration, fluence, scanning speed and overlapping of the subsequent pulses, on the surface activation and the surface morphology are studied. High definition tracks and electrodes are produced. Remarkable alterations of the chemical composition and structural morphology of the ablated traces are observed in comparison with the native material. Raman spectra illustrate well-defined dependence of the chemical composition on the laser fluence, pulse duration, number of pulses and wavelength. An extra peak about ∼512–518\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , assigned to crystalline silicon, is observed after ns- or visible fs-laser processing of the surface. In all cases, the intensities of Si\u003cce:glyph name=\"sbnd\"/\u003eO\u003cce:glyph name=\"sbnd\"/\u003eSi symmetric stretching at 488\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , Si\u003cce:glyph name=\"sbnd\"/\u003eCH 3 symmetric rocking at 685\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , Si\u003cce:glyph name=\"sbnd\"/\u003eC symmetric stretching at 709\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , CH 3 asymmetric rocking\u003cce:hsp sp=\"0.25\"/\u003e+\u003cce:hsp sp=\"0.25\"/\u003eSi\u003cce:glyph name=\"sbnd\"/\u003eC asymmetric stretching at 787\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , and CH 3 symmetric rocking at 859\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , modes strongly decrease. The laser processed areas are also analyzed by SEM and optical microscopy. Selective Pt or Ni metallization of the laser processed traces is produced successfully via electroless plating. The metallization process is not sensitive with respect to the time interval after the laser treatment. DC resistance is measured to be as low as 0.5\u003cce:hsp sp=\"0.25\"/\u003eΩ\u003cce:hsp sp=\"0.25\"/\u003emm −1 . Our results show promising prospects with respect to use such a laser-based method for micro- or nano-fabrication of PDMS devices for MEMS and NEMS.
文章内容（英文）
Abstract(#br)Medical grade polydimethylsiloxane (PDMS) elastomer is a widely used biomaterial as encapsulation and/or as substrate insulator carrier for long term neural implants because of its remarkable properties. Femtosecond ( λ \u003cce:hsp sp=\"0.25\"/\u003e=\u003cce:hsp sp=\"0.25\"/\u003e263 and 527\u003cce:hsp sp=\"0.25\"/\u003enm) and nanosecond (266 and 532\u003cce:hsp sp=\"0.25\"/\u003enm) laser processing of PDMS-elastomer surface, in air, is investigated. The influence of different processing parameters, including laser wavelength, pulse duration, fluence, scanning speed and overlapping of the subsequent pulses, on the surface activation and the surface morphology are studied. High definition tracks and electrodes are produced. Remarkable alterations of the chemical composition and structural morphology of the ablated traces are observed in comparison with the native material. Raman spectra illustrate well-defined dependence of the chemical composition on the laser fluence, pulse duration, number of pulses and wavelength. An extra peak about ∼512–518\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , assigned to crystalline silicon, is observed after ns- or visible fs-laser processing of the surface. In all cases, the intensities of Si\u003cce:glyph name=\"sbnd\"/\u003eO\u003cce:glyph name=\"sbnd\"/\u003eSi symmetric stretching at 488\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , Si\u003cce:glyph name=\"sbnd\"/\u003eCH 3 symmetric rocking at 685\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , Si\u003cce:glyph name=\"sbnd\"/\u003eC symmetric stretching at 709\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , CH 3 asymmetric rocking\u003cce:hsp sp=\"0.25\"/\u003e+\u003cce:hsp sp=\"0.25\"/\u003eSi\u003cce:glyph name=\"sbnd\"/\u003eC asymmetric stretching at 787\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , and CH 3 symmetric rocking at 859\u003cce:hsp sp=\"0.25\"/\u003ecm −1 , modes strongly decrease. The laser processed areas are also analyzed by SEM and optical microscopy. Selective Pt or Ni metallization of the laser processed traces is produced successfully via electroless plating. The metallization process is not sensitive with respect to the time interval after the laser treatment. DC resistance is measured to be as low as 0.5\u003cce:hsp sp=\"0.25\"/\u003eΩ\u003cce:hsp sp=\"0.25\"/\u003emm −1 . Our results show promising prospects with respect to use such a laser-based method for micro- or nano-fabrication of PDMS devices for MEMS and NEMS.
来源出处
Journal|[J]Applied Surface ScienceVolume 336, 2015. PP 321-328
DOI
https://doi.org/10.1016/j.apsusc.2014.12.121

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