文章内容（英文）
The ability of a flexible pressure sensor to possess zero power consumption in standby mode, high sensitivity, and wide linear-response range is critical in real flexible matrix-based scenes. However, when the conventional flexible pressure sensors are attached on a curved surface, a pseudosignal response is generated because of the normal stress, resulting in a short linear-response range. Here, a flexible piezoresistive pressure sensor with high performance, zero standby power consumption is demonstrated. The flexible pressure sensor is fabricated from polydimethylsiloxane (PDMS)/carbon black (CB), patterned polyimide (PI) spacer layer, and laser-induced graphene (LIG) interdigital electrodes. Benefiting from the hierarchical structure and sufficient roughness of PDMS/CB and LIG interdigital electrodes, the proposed pressure sensors (PDMS/CB/PI/LIG) exhibit high sensitivity (43 kPa\u003csup\u003e-1\u003c/sup\u003e), large linear-response range (0.4-13.6 kPa), fast response (\u003c40 ms), and long-term cycle stability (\u003e1800 cycles). The resulting pressure sensor also features zero standby power consumption merit under certain bending conditions (bending angle: 0-5\u003csup\u003eo\u003c/sup\u003e). Furthermore, the effect of the hole diameter of the PI spacer layer on the performance of the pressure sensors is experimentally and theoretically investigated. As a proof of concept, a bioinspired artificial haptic neuron system has been successfully equipped to modulate the number of lit LED lights. The proposed high-performance pressure sensor has promising potential to be used in flexible and wearable electronics, especially for the applications in actual flexible matrix-based scenes., People's Republic of China.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.;;Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.;;Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.;;Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.;;Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.;;Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.;;Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.;;School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.;;School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.;;Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
